Alumina capped ZnO quantum dots multilayer grown by pulsed laser deposition

被引：31

作者：

Barik, S ^{[1
]}

Srivastava, AK

Misra, P

Nandedkar, RV

Kukreja, LM

机构：

[1] Ctr Adv Technol, Thin Film Lab, Indore 452013, India

[2] Ctr Adv Technol, Synchrotron Utilizat Div, Indore 452013, India

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 06期

关键词：

nanostructures; II-VI semiconductors; pulsed laser deposition; optical properties;

D O I：

10.1016/S0038-1098(03)00449-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

To extend the applicability of ZnO, with the bulk band gap of about 3.3 eV, into deep UV region, we have grown a multilayer of alumina capped ZnO quantum dots of mean in-plane sizes in the range of similar to1.8-3.6 nm at room temperature using alternate Pulsed Laser Deposition. Size dependent blue shift of the band gap of these dots up to similar to4.5 eV is observed in the optical absorbance spectra. The observed blue shift can be understood using the effective mass approximation in weak and strong confinement regimes. (C) 2003 Elsevier Ltd. All rights reserved.

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收藏

页码：463 / 467

页数：5

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