All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

被引：13

作者：

Ota, H ^{[1
]}

Fujino, H ^{[1
]}

Migita, S ^{[1
]}

Xiong, SB ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.1370999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An all-perovskite-oxide transistor composed of a tetragonal perovskite PbZr0.5Ti0.5O3 (ferroelectric) and a layered perovskite Bi2Sr2CuO6 (conducting channel) is fabricated on a cubic perovskite Nb-doped SrTiO3 (gate electrode). We demonstrate a considerably large conductance modulation of Bi2Sr2CuO6 by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors. (C) 2001 American Institute of Physics.

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页码：8153 / 8158

页数：6

相关论文

共 17 条

[1] FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].

AHN, CH ;

TRISCONE, JM ;

ARCHIBALD, N ;

DECROUX, M ;

HAMMOND, RH ;

GEBALLE, TH ;

FISCHER, O ;

BEASLEY, MR .

SCIENCE, 1995, 269 (5222) :373-376

[2] Electrostatic modulation of superconductivity in ultrathin GdBa2Cu3O7-x films [J].

Ahn, CH ;

Gariglio, S ;

Paruch, P ;

Tybell, T ;

Antognazza, L ;

Triscone, JM .

SCIENCE, 1999, 284 (5417) :1152-1155

[3] Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].

Ahn, CH ;

Tybell, T ;

Antognazza, L ;

Char, K ;

Hammond, RH ;

Beasley, MR ;

Fischer, O ;

Triscone, JM .

SCIENCE, 1997, 276 (5315) :1100-1103

[4] Hall coefficients in the superconductor-insulator transition of Bi2+xSr2-xCuOy: Measurement of Hall-bar shaped single crystals fabricated by excimer-laser cutting [J].

Inagaki, K ;

Tanda, S ;

Sajiki, K .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3075-3077

[5] Atomic absorption spectroscopy system for flux monitoring and atomic-layer control of molecular beam epitaxial growth of BiSrCaCuO [J].

Kasai, Y ;

Sakai, S .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (07) :2850-2855

[6] PROCESSING AND ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 (X = 0.2-0.75) FILMS - COMPARISON OF METALLOORGANIC DECOMPOSITION AND SOL-GEL PROCESSES [J].

KLEE, M ;

EUSEMANN, R ;

WASER, R ;

BRAND, W ;

VANHAL, H .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) :1566-1576

[7] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[8] Ferroelectric field effect transistor based on epitaxial perovskite heterostructures [J].

Mathews, S ;

Ramesh, R ;

Venkatesan, T ;

Benedetto, J .

SCIENCE, 1997, 276 (5310) :238-240

[9]

Moll J., 1963, IEEE Trans. Electron Devices, V10, P338, DOI DOI 10.1109/T-ED.1963.15245

[10] Particle-free superconducting Bi2Sr2CaCu2Ox ultrathin films prepared by atomic-layer-controlled molecular beam epitaxy technique [J].

Ota, H ;

Migita, S ;

Kasai, Y ;

Matsuhata, H ;

Sakai, S .

PHYSICA C, 1999, 311 (1-2) :42-48