Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications

被引：4

作者：

Bera, LK ^{[1
]}

Ray, SK

Nayak, DK

Usami, N

Shiraki, Y

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[2] Altera Corp, Fremont, CA 94555 USA

[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 153, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 02期

关键词：

band offset; heterostructure MOSFET; gas source molecular beam epitaxy (GSMBE); silicon-germanium; strained-Si;

D O I：

10.1007/s11664-999-0225-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gas source molecular beam epitaxy has been employed for the growth of a high quality strained-Si layer on a completely relaxed step-graded Si1-xGex buffer layer. As-grown strained-Si layers have been characterized using secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, atomic force microscopy, and spectroscopic ellipsometry for the determination of composition, thickness, crystalline quality, and surface roughness. Heterojunction conduction and valence band offsets (Delta E-c, Delta E-v) of strained-Si/SiGe heterostructure have been determined from measured threshold voltages of a strained-Si channel p-metal oxide semiconductor field effect transistor (MOSFET) fabricated using grown films. MOS capacitance-voltage profiling has been employed for the extraction of strained-Si layer thickness and apparent doping profile in the device.

引用

页码：98 / 104

页数：7

共 37 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] Strained-Si channel heterojunction p-MOSFETS [J].

Armstrong, GA ;

Maiti, CK .

SOLID-STATE ELECTRONICS, 1998, 42 (04) :487-498

[3] THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI/SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES [J].

BRIGHTEN, JC ;

HAWKINS, ID ;

PEAKER, AR ;

PARKER, EHC ;

WHALL, TE .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1894-1899

[4] Si1-xGex/Si valence band offset determination using current-voltage characteristics [J].

Chretien, O ;

Apetz, R ;

Souifi, A ;

Vescan, L .

THIN SOLID FILMS, 1997, 294 (1-2) :198-200

[5] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].

FITZGERALD, EA ;

XIE, YH ;

GREEN, ML ;

BRASEN, D ;

KORTAN, AR ;

MICHEL, J ;

MII, YJ ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813

[6] SPECTRAL BLUE SHIFT OF PHOTOLUMINESCENCE IN STRAINED-LAYER SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY [J].

FUKATSU, S ;

YOSHIDA, H ;

FUJIWARA, A ;

TAKAHASHI, Y ;

SHIRAKI, Y ;

ITO, R .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :804-806

[7]

Harame D, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P731, DOI 10.1109/IEDM.1995.499322

[8] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

[9] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS [J].

HUMLICEK, J ;

GARRIGA, M ;

ALONSO, MI ;

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) :2827-2832

[10]

Humlicek J, 1995, PROPERTIES STRAINED, P121

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