Random and localized resistive switching observation in Pt/NiO/Pt

被引：83

作者：

Yun, Jung-Bin

Kim, Sejin

Seo, Sunae

Lee, Myoung-Jae

Kim, Dong-Chul

Ahn, Seung-Eon

Park, Yongsoo

Kim, Jiyoung

Shin, Hyunjung

机构：

[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[2] Samsung Adv Inst Technol, Semicond Device & Mat Lab, Yongin, South Korea

[3] Univ Texas Dallas, Dept Elect Engn, Dallas, TX 75083 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 06期

关键词：

D O I：

10.1002/pssr.200701205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resistive memory switching devices based on transition metal oxides are now emerging as a candidate for nonvolatile memories. To visualize nano-sized (10 nm to 30 nm in diameter) conducting filamentary paths in the surface of NiO thin films during repetitive switching, current sensing-atomic force microscopy and ultra-thin (< 5 nm) Pt films as top electrodes were used. Some areas (or spots), which were assumed to be the beginning of the conducting filaments, appeared (formation) and disappeared (rupture) in a localized and random fashion during the switching and are thought to contribute to resistive memory switching.

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页码：280 / 282

页数：3

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