共 11 条
- [2] Degraeve R, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P863, DOI 10.1109/IEDM.1995.499353
- [4] Quasi-breakdown in ultrathin gate dielectrics [J]. MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 157 - 160
- [8] Switching behavior of the soft breakdown conduction characteristic in ultrathin (<5 nm) oxide MOS capacitors [J]. 1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 42 - 46
- [10] Percolation models for gate oxide breakdown [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5757 - 5766