Ultralow gradient HGF-grown ZnGeP2 and CdGeAs2 and their optical properties

被引：114

作者：

Schunemann, PG ^{[1
]}

Pollak, TM ^{[1
]}

机构：

[1] Sanders Lockheed Martin Co, Nashua, NH 03061 USA

来源：

MRS BULLETIN | 1998年 / 23卷 / 07期

关键词：

D O I：

10.1557/S0883769400029043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：23 / 27

页数：5

共 33 条

[1] SYNTHESIS AND GROWTH-PROCESSES FOR ZINC GERMANIUM DIPHOSPHIDE [J].

BLISS, DF ;

HARRIS, M ;

HORRIGAN, J ;

HIGGINS, WM ;

ARMINGTON, AF ;

ADAMSKI, JA .

JOURNAL OF CRYSTAL GROWTH, 1994, 137 (1-2) :145-149

[2] SEMICONDUCTING A2B4CV2 COMPOUNDS [J].

BORSHCHE.AS ;

GORYUNOV.NA ;

KESAMANL.FP ;

NASLEDOV, DN .

PHYSICA STATUS SOLIDI, 1967, 21 (01) :9-&

[3] EFFECTS OF HEAT PRETREATMENT OF STARTING MATERIALS ON THE OPTICAL TRANSPARENCY OF CDGEAS2 CRYSTALS [J].

BORSHCHEVSKY, AS ;

ROUTE, RK ;

FEIGELSON, RS .

MATERIALS RESEARCH BULLETIN, 1980, 15 (04) :409-414

[4] LINEAR AND NONLINEAR OPTICAL PROPERTIES OF TERNARY AII BIV C2V CHALCOPYRITE SEMICONDUCTORS [J].

BOYD, GD ;

BUEHLER, E ;

WERNICK, JH ;

STORZ, FG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (04) :419-&

[5]

BRUDNYI VN, 1978, PHYS STATUS SOLIDI A, V50, P379, DOI 10.1002/pssa.2210500202

[6]

BUDNI PA, 1992, OSA PROC, V13, P380

[7] CONCERNING GROWTH OF SINGLE CRYSTALS OF II-IV-V DIAMOND-LIKE COMPOUNDS ZNSIP2, CDSIP2, ZNGEP2, AND CDSNP2 AND STANDARD ENTHALPIES OF FORMATION FOR ZNSIP2 AND CDSIP2 [J].

BUEHLER, E ;

WERNICK, JH .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) :324-&

[8]

Buehler E., 1973, Journal of Electronic Materials, V2, P445, DOI 10.1007/BF02660148

[9]

BYER RL, 1973, TREATISE QUANTUM ELE, P587

[10]

FEIGELSON RS, 1975, J CRYST GROWTH, V28, P138, DOI 10.1016/0022-0248(75)90035-4

← 1 2 3 4 →