Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties

被引：114

作者：

Xiao, K ^{[1
]}

Liu, Y ^{[1
]}

Yu, G ^{[1
]}

Zhu, D ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 3-4期

关键词：

D O I：

10.1007/s00339-003-2169-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we employ different substrate temperatures during the deposition process and observe a highly ordered structure and strong orientation of copper phthalocyanine (CuPc) molecules on Si/SiO2 by using X-ray-diffraction and transmission electron microscopy analysis. The results show the effect of CuPc morphology at different substrate temperatures on the organic field-effect-transistor performance. When the substrate temperature for deposition of CuPc is 120 degreesC, a mobility of 3.75x10(-3) cm(2)/V s can be obtained.

引用

页码：367 / 370

页数：4

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