Direct UV Patterning of Electronically Active Fullerene Films

We utilize UV light for the attainment of high-resolution, electronically active patterns in [6,6]-phenyl C-61-butyric acid methyl ester (PCBM) films. The patterns are created by directly exposing selected parts of a solution-cast PCBM film to UV light, and thereafter developing the film by immersing it in a tuned developer solution. We demonstrate that it is possible to attain complex, large-area PCBM structures with a smallest demonstrated-feature size of 1 mu m by this method, and that the patterned PCBM material exhibits a high average electron mobility (1.2 x 10(-2) cm(2) V-1 s(-1)) in transistor experiments. The employment of UV light for direct patterning of PCBM for electronic applications is attractive, because PCBM exhibits high absorption in the UV range, and no sacrificial photoresist is needed. The patterning is achieved through the transformation by UV light of the soluble PCBM monomers into insoluble dimers with retained attractive electronic properties.