A chemically amplified fullerene-derivative molecular electron-beam resist

被引：37

作者：

Gibbons, F. ^{[1
]}

Zaid, Hasnah M. ^{[1
]}

Manickam, Mayandithevar ^{[2
]}

Preece, Jon A. ^{[2
]}

Palmer, Richard E. ^{[1
]}

Robinson, Alex P. G. ^{[1
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

来源：

SMALL | 2007年 / 3卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

chemical amplification; electron beams; fullerenes; lithography; resists;

D O I：

10.1002/smll.200700324

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity the material is increased by two orders of magnitude, and 20-nm line widths are patterned.

引用

页码：2076 / 2080

页数：5

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