X-ray scattering from misfit dislocations in heteroepitaxial films:: The case of Nb(110) on Al2O3

被引：26

作者：

Barabash, RI ^{[1
]}

Donner, W

Dosch, H

机构：

[1] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Theoret & Angew Phys, D-70569 Stuttgart, Germany

[3] Natl Tech Univ Ukraine, Kiev Polytech Inst, UA-252056 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1342215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We apply the Krivoglaz theory of x-ray scattering to thin epitaxial films containing misfit dislocations and reanalyze the seemingly puzzling x-ray scattering phenomena observed in several heteroepitaxial films. We show that the two-line shape scattering distribution and its dependence upon film thickness and momentum transfer can be understood in natural way and on a quantitative level. Extended diffuse x-ray scattering maps have been obtained from Nb(110)/Al2O3(11 (2) over bar0) which are discussed within the framework of this theory disclose a particular dislocation network at the Nb-Al2O3 interface. (C) 2001 American Institute of Physics.

引用

页码：443 / 445

页数：3

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