Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

被引：6

作者：

Augendre, E. ^{[1
]}

Pawlak, B. J. ^{[2
]}

Kubicek, S. ^{[1
]}

Hoffmann, T. ^{[1
]}

Chiarella, T. ^{[1
]}

Kerner, C. ^{[1
]}

Severi, S. ^{[1
]}

Falepin, A. ^{[1
]}

Ramos, J. ^{[1
]}

De Keersgieter, A. ^{[1
]}

Eyben, P. ^{[1
]}

Vanhaeren, D. ^{[1
]}

Vandervorst, W. ^{[1
]}

Jurczak, M. ^{[1
]}

Absil, P. ^{[1
]}

Biesemans, S. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] NXP, B-3001 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 11-12期

关键词：

MOSFET; ion implantation; carbon; spike annealing;

D O I：

10.1016/j.sse.2007.09.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the simultaneous improvement of both on- and off-properties for n- and p-channel MOSFETs by means of carbon co-implantation at extension level, using conventional spike annealing. For the first time, spike-annealed NFETs with phosphorus-implanted source/drain extensions (SDE) are shown to outperform conventional As-implanted devices in the deca-nanometric range. Parameters such as on-current, drain-induced barrier lowering (DIBL), external resistance (R-EXT) vs. effective channel length (L-eff) trade-off are examined. To obtain the full benefit of carbon co-implantation, we recommend adjusting pocket, highly doped drain (HDD) and spacer parameters. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1432 / 1436

页数：5

共 12 条

[1] Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals [J].

Duffy, R. ;

Dao, T. ;

Tamminga, Y. ;

van der Tak, K. ;

Roozeboom, F. ;

Augendre, E. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[2]

Fellch SB, 2006, SOLID STATE TECHNOL, V49, P45

[3] CARBON IN SILICON - PROPERTIES AND IMPACT ON DEVICES [J].

KOLBESEN, BO ;

MUHLBAUER, A .

SOLID-STATE ELECTRONICS, 1982, 25 (08) :759-775

[4] Effects of germanium and carbon coimplants on phosphorus diffusion in silicon [J].

Ku, K. C. ;

Nieh, C. F. ;

Gong, J. ;

Huang, L. P. ;

Sheu, Y. M. ;

Wang, C. C. ;

Chen, C. H. ;

Chang, H. ;

Wang, L. T. ;

Lee, T. L. ;

Chen, S. C. ;

Liang, M. S. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[5] Superior nMOSFET scalability using fluorineine co-implantation and spike annealing [J].

Kubicek, S. ;

Hoffmann, T. ;

Augendre, E. ;

Pawlak, B. ;

Chiarella, T. ;

Kerner, C. ;

Severi, S. ;

Falepin, A. ;

De Keersgieter, A. ;

Noda, T. ;

Jurczak, M. ;

Absil, P. ;

Biesemans, S. .

ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, :101-104

[6]

Pawlak BJ, 2006, MATER RES SOC SYMP P, V912, P21

[7]

Pawlak BJ, 2006, MATER RES SOC SYMP P, V912, P33

[8]

Ragnarsson LÅ, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P234

[9]

Severi S, 2006, INT EL DEVICES MEET, P610

[10]

SEVERI S, 2005, INT C SOL STAT DEV M, P910

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