Probing the phase composition of silicon films in situ by etch product detection

被引：18

作者：

Dingemans, G.

van den Donker, M. N.

Gordijn, A.

Kessels, W. M. M.

van de Sanden, M. C. M.

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Forschungszentrum Julich, IEF5 Photovoltaik, D-52425 Julich, Germany

[3] Solland Solar Cells BV, NL-6422 RL Heerlen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2799738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH4) gas density during a short H-2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis. (C) 2007 American Institute of Physics.

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页数：3

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