Sealing porous low-k dielectrics with silica

被引：44

作者：

de Rouffignac, P ^{[1
]}

Li, ZW ^{[1
]}

Gordon, RG ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 12期

关键词：

D O I：

10.1149/1.1814594

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The surface pores of a porous low-k dielectric layer were sealed by a smooth coating of silica just a few nanometers thick. Atomic layer deposition (ALD) of tungsten nitride (WN) onto the smooth silica surface provided a very thin (1.5 nm) barrier to the diffusion of copper. Without the silica sealing layer, ALD WN penetrated through the low-k dielectric. Strong adhesion was demonstrated for the structure Si/porous dielectric/SiO2/WN/Co/Cu, in which the top four layers were formed by ALD. This structure is stable to at least 400 degrees C and is suitable for making narrow interconnects for future microelectronics. (C) 2004 The Electrochemical Society.

引用

页码：G306 / G308

页数：3

共 14 条

[1]

[Anonymous], 2003, INT TECHNOLOGY ROADM

[2] Highly conformal thin films of tungsten nitride prepared by atomic layer deposition from a novel precursor [J].

Becker, JS ;

Suh, S ;

Wang, SL ;

Gordon, RG .

CHEMISTRY OF MATERIALS, 2003, 15 (15) :2969-2976

[3] Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia [J].

Becker, JS ;

Gordon, RG .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2239-2241

[4] Atomic layer deposition of barriers for interconnect [J].

Besling, W ;

Satta, A ;

Schuhmacher, J ;

Abell, T ;

Sutcliffe, V ;

Hoyas, AM ;

Beyer, G ;

Gravesteijn, D ;

Maex, K .

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, :288-291

[5] Critical properties of nanoporous low dielectric constant films revealed by Brillouin light scattering and surface acoustic wave spectroscopy [J].

Flannery, CM ;

Wittkowski, T ;

Jung, K ;

Hillebrands, B ;

Baklanov, MR .

APPLIED PHYSICS LETTERS, 2002, 80 (24) :4594-4596

[6] A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches [J].

Gordon, RG ;

Hausmann, D ;

Kim, E ;

Shepard, J .

CHEMICAL VAPOR DEPOSITION, 2003, 9 (02) :73-78

[7] Rapid vapor deposition of highly conformal silica nanolaminates [J].

Hausmann, D ;

Becker, J ;

Wang, SL ;

Gordon, RG .

SCIENCE, 2002, 298 (5592) :402-406

[8] Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors [J].

Hausmann, DM ;

Kim, E ;

Becker, J ;

Gordon, RG .

CHEMISTRY OF MATERIALS, 2002, 14 (10) :4350-4358

[9] X-ray reflectivity and FTIR measurements of N2 plasma effects on the density profile of hydrogen silsesquioxane thin films [J].

Lee, HJ ;

Lin, EK ;

Wu, WL ;

Fanconi, BM ;

Lan, JK ;

Cheng, YL ;

Liou, HC ;

Wang, YL ;

Feng, MS ;

Chao, CG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (10) :F195-F199

[10] Atomic layer deposition of transition metals [J].

Lim, BS ;

Rahtu, A ;

Gordon, RG .

NATURE MATERIALS, 2003, 2 (11) :749-754

← 1 2 →