A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing

被引：23

作者：

Jeon, JH ^{[1
]}

Lee, MC ^{[1
]}

Park, KC ^{[1
]}

Jung, SH ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Kwanak Ku, Seoul 151742, South Korea

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new excimer laser annealing method, which results in a single grain boundary in the channel of polycrystalline silicon thin film transistor (poly-Si TFT), is proposed. The proposed method employs lateral grain growth through aluminum patterns on an amorphous silicon layer. The aluminum pattern acts as a selective beam mask and a lateral heat sink during the laser irradiation. Poly-Si TFTs fabricated by the proposed ELA method exhibit considerably improved characteristics, such as the high field effect mobility exceeding 240 cm(2)/Vsec. The turn-off characteristics have also been improved by the field-reducing structure

引用

页码：213 / 216

页数：4

共 4 条

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