POLYSILICON THIN-FILM TRANSISTORS WITH CHANNEL LENGTH AND WIDTH COMPARABLE TO OR SMALLER THAN THE GRAIN-SIZE OF THE THIN-FILM

被引：106

作者：

YAMAUCHI, N ^{[1
]}

HAJJAR, JJJ ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body. © 1991 IEEE

引用

页码：55 / 60

页数：6

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