POLYSILICON TRANSISTORS FABRICATED ON PLASMA-DEPOSITED AMORPHOUS-SILICON

被引：10

作者：

IPRI, AC

KAGANOWICZ, G

机构：

[1] David Sarnoff Research Cent,, Princeton, NJ, USA, David Sarnoff Research Cent, Princeton, NJ, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：708 / 710

页数：3

共 7 条

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HATALIS, MK ;

GREVE, DW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364

[2] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[3]

MIMURA A, 1987, IEDM, P436

[4]

Morozumi S., 1983, 1983 SID International Symposium. Digest of Technical Papers, P156

[5]

NAGUCHI T, 1986, JPN J APPL PHYS, V25, pL121

[6] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

[7] EFFECTS OF H+ IMPLANT DOSE AND FILM DEPOSITION CONDITIONS ON POLYCRYSTALLINE-SI MOSFET CHARACTERISTICS [J].

RODDER, M ;

ANTONIADIS, DA ;

SCHOLZ, F ;

KALNITSKY, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :27-29

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