Electronic properties of wet-chemically prepared oxide layers

被引：3

作者：

Angermann, H ^{[1
]}

Henrion, W ^{[1
]}

Rebien, M ^{[1
]}

机构：

[1] Hahn Meitner Inst, Abt Silizium Photovoltaik, DE-12489 Berlin, Germany

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷

关键词：

interface state density; spectroscopic ellipsometry (SE); wet chemical oxides;

D O I：

10.4028/www.scientific.net/SSP.76-77.181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of wet-chemical oxidation treatments on electronic properties of Si(111) and Si(100) interfaces was investigated by combining two surface-sensitive techniques. Surface photovoltage (SPV) and spectroscopic ellipsometry (SE) measurements in the ultraviolet/visible (UV-VIS) spectroscopic region, provided detailed information about surface charge, interface state density and oxide thickness on wet-chemically oxidised Si surfaces. High surface state densities and different surface charges were obtained an conventionally treated surfaces. Whereas the RCA II process and most of the conventional oxidation treatments were found to cause a positive oxide charge, on RCA I treated surfaces a negative charge component was observed.

引用

页码：181 / 184

页数：4

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