Large area deposition of hydrogenated amorphous silicon by VHF-PECVD using novel electrodes

被引：7

作者：

Ito, N ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Anelva Corp, Fuchu, Tokyo 1838508, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916029

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel discharge source capable of depositing a-Si:H films on large area has been developed. This discharge source consists of "U" shaped loop-antenna. A number of antennas were arranged in parallel to each other, forming one plane in front of a substrate. A-Si:H was deposited on a 1000 mm x 500 mm glass substrate at 0.4 nm/sec using VHF(81 MHz) plasma. The non-uniformity of deposition rate in the direction along the antenna was about +/- 80% when the VHF power was equally fed to each antenna with a continuous mode. Whereas, this non-uniformity could be suppressed to less than +/- 10% by controlling the power feeding method with a pulse mode.

引用

页码：900 / 903

页数：4

共 8 条

[1] INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION [J].