Transient states of matter during short pulse laser ablation

被引:511
作者
Sokolowski-Tinten, K [1 ]
Bialkowski, J
Cavalleri, A
von der Linde, D
Oparin, A
Meyer-ter-Vehn, J
Anisimov, SI
机构
[1] Univ Essen Gesamthsch, Inst Laser & Plasmaphys, D-45117 Essen, Germany
[2] Max Planck Inst Quantenopt, D-85748 Garching, Germany
[3] Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
关键词
D O I
10.1103/PhysRevLett.81.224
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Short pulse laser ablation of semiconductors and metals is studied by means of ultrafast time-resolved microscopy. The characteristic stages of the conversion of solid material into hot fluid matter undergoing ablation are identified, initially metallic material transforms during the expansion into a transparent state with a high index of refraction.
引用
收藏
页码:224 / 227
页数:4
相关论文
共 22 条
[1]  
BLOEMBERGEN N, 1986, MATER RES SOC S P, V51, P3
[2]  
Bohren C F., 1998, Absorption and Scattering of Light by Small Particles
[3]  
Bushman AV, 1992, EQUATIONS STATE META
[4]   FEMTOSECOND IMAGING OF MELTING AND EVAPORATION AT A PHOTOEXCITED SILICON SURFACE [J].
DOWNER, MC ;
FORK, RL ;
SHANK, CV .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :595-599
[6]  
HENSEL F, 1990, J PHYS-CONDENS MAT, V2, P33
[7]   Laser ablation of dielectrics with pulse durations between 20 fs and 3 ps [J].
Kautek, W ;
Kruger, J ;
Lenzner, M ;
Sartania, S ;
Spielmann, C ;
Krausz, F .
APPLIED PHYSICS LETTERS, 1996, 69 (21) :3146-3148
[8]  
Landau LD, 1978, COURSE THEORETICAL P, V5
[9]  
LANDAU LD, 1982, COURSE THEORETICAL P, V6
[10]   SIMPLE TECHNIQUE FOR MEASUREMENTS OF PULSED GAUSSIAN-BEAM SPOT SIZES [J].
LIU, JM .
OPTICS LETTERS, 1982, 7 (05) :196-198