Transient states of matter during short pulse laser ablation

被引：511

作者：

Sokolowski-Tinten, K ^{[1
]}

Bialkowski, J

Cavalleri, A

von der Linde, D

Oparin, A

Meyer-ter-Vehn, J

Anisimov, SI

机构：

[1] Univ Essen Gesamthsch, Inst Laser & Plasmaphys, D-45117 Essen, Germany

[2] Max Planck Inst Quantenopt, D-85748 Garching, Germany

[3] Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.81.224

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Short pulse laser ablation of semiconductors and metals is studied by means of ultrafast time-resolved microscopy. The characteristic stages of the conversion of solid material into hot fluid matter undergoing ablation are identified, initially metallic material transforms during the expansion into a transparent state with a high index of refraction.

引用

页码：224 / 227

页数：4

共 22 条

[11] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

BLOEMBERGEN, N ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[12] Laser ablation and micromachining with ultrashort laser pulses [J].

Liu, X ;

Du, D ;

Mourou, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (10) :1706-1716

[13] CRITICAL-ASSESSMENT OF THERMAL MODELS FOR LASER SPUTTERING AT HIGH FLUENCES [J].

MIOTELLO, A ;

KELLY, R .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3535-3537

[14] Ablation of metals by ultrashort laser pulses [J].

Nolte, S ;

Momma, C ;

Jacobs, H ;

Tunnermann, A ;

Chichkov, BN ;

Wellegehausen, B ;

Welling, H .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1997, 14 (10) :2716-2722

[15] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457

[16]

Skripov V. P., 1979, Soviet Physics - Uspekhi, V22, P389, DOI 10.1070/PU1979v022n06ABEH005571

[17] ULTRAFAST LASER-INDUCED ORDER-DISORDER TRANSITIONS IN SEMICONDUCTORS [J].

SOKOLOWSKITINTEN, K ;

BIALKOWSKI, J ;

VONDERLINDE, D .

PHYSICAL REVIEW B, 1995, 51 (20) :14186-14198

[18] TIME-DEPENDENCE OF THE LASER-INDUCED FEMTOSECOND LATTICE INSTABILITY OF SI AND GAAS - ROLE OF LONGITUDINAL OPTICAL DISTORTIONS [J].

STAMPFLI, P ;

BENNEMANN, KH .

PHYSICAL REVIEW B, 1994, 49 (11) :7299-7305

[19] Nanosecond-to-femtosecond laser-induced breakdown in dielectrics [J].

Stuart, BC ;

Feit, MD ;

Herman, S ;

Rubenchik, AM ;

Shore, BW ;

Perry, MD .

PHYSICAL REVIEW B, 1996, 53 (04) :1749-1761

[20]

von Allmen M., 1995, SPRINGER SERIES MAT, V2

← 1 2 3 →