Electrodeposition and growth mechanism of SnSe thin films

被引:72
作者
Bicer, Mustafa [1 ]
Sisman, Ilkay [1 ]
机构
[1] Sakarya Univ, Arts & Sci Fac, Dept Chem, TR-54187 Sakarya, Turkey
关键词
SnSe; Thin films; Electrodeposition; Surface morphology; TIN SELENIDE FILMS; ELECTROCHEMICAL CODEPOSITION METHOD; ATOMIC LAYER EPITAXY; OPTICAL-PROPERTIES; TIN(II) SELENIDE; DEPOSITION; CDS; SEMICONDUCTOR; ELECTROLYTES; AU(111);
D O I
10.1016/j.apsusc.2010.10.096
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aqueous solution containing SnCl2, Na2SeO3, and EDTA at room temperature (25 degrees C). The electrochemical behaviors and the codeposition potentials of Sn and Se were explored by cyclic voltammetry. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and UV-vis absorption spectroscopy were employed to characterize the thin films. When the electrodeposition potential increased, the Se content in the films decreased. It was found that the stoichiometric SnSe thin films could be obtained at -0.50 V. The as-deposited films were crystallized in the preferential orientation along the (1 1 1) plane. The morphologies of SnSe films could be changed from spherical grains to platelet-like particles as the deposition potential increases. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of needle-like particles on the overlayer of the film. The optical absorption study showed the film has direct transition with band gap energy of 1.3 eV. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:2944 / 2949
页数:6
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