Selective Electrodeposition and Growth Mechanism of Thermoelectric Bismuth-Based Binary and Ternary Thin Films

被引:20
作者
Bicer, Mustafa [1 ]
Kose, Hilal [1 ]
Sisman, Ilkay [1 ]
机构
[1] Sakarya Univ, Arts & Sci Fac, Dept Chem, TR-54187 Sakarya, Turkey
关键词
ATOMIC LAYER EPITAXY; ELECTROCHEMICAL CODEPOSITION METHOD; UNDERPOTENTIAL DEPOSITION; NANOWIRE ARRAYS; HIGH-DENSITY; BI2TE3; SB2TE3; ECALE; SUBSTRATE; CRYSTALS;
D O I
10.1021/jp101221u
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Different morphologies of thermoelectric Bi(1-x)Sb(x) and Bi(2-x)Sb(x)Te(3) thin films, including rods, dendrites, thin sheets, and spherical particles, were selectively obtained by an electrodeposition method at room temperature (25 degrees C). Cyclic voltammetry was used for determination of the deposition potentials of thin films. The influences of the deposition potential and the electrolyte composition on the films were studied. X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS) were employed to characterize the thin films. It was found that the different shaped Bi-rich Bi(1-x)Sb(x) films can be obtained by tuning the electrolyte composition. However, the Bi(2-x)Sb(x)Te(3) films can be fabricated by changing the deposition potential. In underpotentials (UPD), the reduction reactions of Bi(3+), Te(4+), and Sb(3+) take place to form (Bi(0.5)Sb(0.5))(2)Te(3). When the potential shifts into overpotentials (OPD), Bi(0.5)Sb(1.5)Te(3) is formed on the electrode surface. The EDS data indicates that the composition of the films is consistent with XRD results. The SEM investigations show that the growth mechanism of deposited Bi(1-x)Sb(x) and Bi(2-x)Sb(x)Te(3) films depends on the electrolyte composition and the deposition potential, respectively.
引用
收藏
页码:8256 / 8263
页数:8
相关论文
共 36 条
[1]   Preparation of Bi1-xSbx films by electrodeposition [J].
Besse, F ;
Boulanger, C ;
Lecuire, JM .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 2000, 30 (03) :385-392
[2]   Electrochemical synthesis of CdS nanowires by underpotential deposition in anodic alumina membrane templates [J].
Bicer, Mustafa ;
Aydin, Ali Osman ;
Sisman, Ilkay .
ELECTROCHIMICA ACTA, 2010, 55 (11) :3749-3755
[3]   PROPERTIES OF THIN-FILM THERMOELECTRIC-MATERIALS - APPLICATION TO SENSORS USING THE SEEBECK EFFECT [J].
BOYER, A ;
CISSE, E .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 13 (02) :103-111
[4]   Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1-x)2Te3 films [J].
Del Frari, D ;
Diliberto, S ;
Stein, N ;
Boulanger, C ;
Lecuire, JM .
THIN SOLID FILMS, 2005, 483 (1-2) :44-49
[5]   Atomic layer epitaxy of CdTe using an automated electrochemical thin-layer flow deposition reactor [J].
Flowers, BH ;
Wade, TL ;
Garvey, JW ;
Lay, M ;
Happek, U ;
Stickney, JL .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 524 :273-285
[6]   Thickness and temperature effects on electrical resistivity of (Bi0.5Sb0.5)2Te3 thin films [J].
Ganesan, P. G. ;
Das, V. Damodara .
MATERIALS LETTERS, 2006, 60 (17-18) :2059-2065
[7]   ELECTROCHEMICAL ATOMIC LAYER EPITAXY (ECALE) [J].
GREGORY, BW ;
STICKNEY, JL .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1991, 300 (1-2) :543-561
[8]  
Hamelin A., 1985, MODERN ASPECTS ELECT, P1
[9]   Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-FeSi2+x thin films [J].
Heinrich, A ;
Griessmann, H ;
Behr, G ;
Ivanenko, K ;
Schumann, J ;
Vinzelberg, H .
THIN SOLID FILMS, 2001, 381 (02) :287-295
[10]   Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition [J].
Huang, Qinghua ;
Wang, Wei ;
Jia, Falong ;
Zhang, Zhirong .
JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, 2006, 13 (03) :277-280