Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1-x)2Te3 films

被引:55
作者
Del Frari, D [1 ]
Diliberto, S [1 ]
Stein, N [1 ]
Boulanger, C [1 ]
Lecuire, JM [1 ]
机构
[1] Univ Paul Verlaine, Lab Electrochim Mat, UMR 7555, F-57078 Metz, France
关键词
electrochemistry (113); semiconductors (430); antimony bismuth telluride;
D O I
10.1016/j.tsf.2004.12.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the processes associated with the electrodeposition of bismuth antimony telluride thermoelectric films, were reported along with an analysis of the composition and crystallinity of the resulting films. The electrodeposition can be described by the general reaction 2(1-x) Bi3++2x Sb3++3 Te+IV+18e(-)->(Bi1-xSbx)(2)Te-3. Cyclic voltammetry studies led to the determination of the deposition potential of the binaries systems Bi-Te, Sb-Te, and the ternary Bi-Sb-Te dissolved in I M perchloric acid and 0.1 M tartaric acid. The influence of the deposition potential and the electrolyte composition on film stoichiometry and their crystal parameters have been studied. It was shown that all stoichiometries of the solid solution BixSb2-xTe3 can be easily adjusted by controlling the deposition potential and the electrolyte solution. (c) 2004 Elsevier B.V All rights reserved.
引用
收藏
页码:44 / 49
页数:6
相关论文
共 24 条
[1]  
[Anonymous], 1998, KKO, P155
[2]  
[Anonymous], 1957, SEMICONDUCTORS THERM
[3]   Thickness and temperature dependence of electrical properties of semiconducting (Bi0.75Sb0.25)2Te3 thin films [J].
Das, VD ;
Ganesan, PG .
SOLID STATE COMMUNICATIONS, 1998, 106 (05) :315-320
[4]   Development of thick-film thermoelectric microcoolers using electrochemical deposition [J].
Fleurial, JP ;
Borshchevsky, A ;
Ryan, MA ;
Phillips, WM ;
Snyder, JG ;
Caillat, T ;
Kolawa, A ;
Herman, JA ;
Mueller, P ;
Nicolet, M .
THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS, 1999, 545 :493-500
[5]   Flash evaporated layers of (Bi2Te3-Bi2Se3)(N) and (Bi2Te3-Sb2Te3)(P) [J].
Foucaran, A ;
Sackda, A ;
Giani, A ;
Pascal-Delannoy, F ;
Boyer, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 52 (2-3) :154-161
[6]   THERMOELECTRIC AND THERMAL-PROPERTIES OF GAALAS PELTIER-COOLED LASER-DIODES [J].
HAVA, S ;
SEQUEIRA, HB ;
HUNSPERGER, RG .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1727-1732
[7]   Characteristics of Bi0.5Sb1.5Te3/Be2Te2.4Se0.6 thin-film thermoelectric devices for power generation [J].
Kiely, JH ;
Lee, DH .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1997, 8 (06) :661-665
[8]  
KIM HC, 1998, THERMOELECTRIS 1998, P125
[9]   Microstructural characterization of ultrarapid quenched bismuth and antimony tellurides alloys [J].
Koukharenko, E ;
Fréty, N ;
Shepelevich, VG ;
Tedenac, JC .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) :773-778
[10]   CHARACTERIZATION OF OPTICAL DISKS [J].
LOU, DY .
APPLIED OPTICS, 1982, 21 (09) :1602-1609