Preparation of Bi2-xSbxTe3 thermoelectric films by electrodeposition

被引：6

作者：

Huang, Qinghua ^{[1
]}

Wang, Wei ^{[1
]}

Jia, Falong ^{[1
]}

Zhang, Zhirong ^{[1
]}

机构：

[1] Tianjin Univ, Dept Appl Chem, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China

来源：

JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING | 2006年 / 13卷 / 03期

关键词：

thermoelectric films; bismuth antimony telluride compounds; electrodeposition; Seebeck coefficient; morphology;

D O I：

10.1016/S1005-8850(06)60058-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2-xSbxTe3 thermoelectric films were electrochemically deposited from the solution containing Bi3+, HTeO2+ and SbO+. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi2-xSbxTe3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi2-xSbxTe3 films were measured. The results showed that the composition of the film electrodeposited at -0.5 V is Bi0.5Sb1.5Te3 with the largest Seebeck coefficient of 213 mu V center dot K-1.

引用

页码：277 / 280

页数：4

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