Elaboration of (Bi1-xSbx)2Te3 thin films by metallorganic chemical vapor deposition

被引：10

作者：

Aboulfarah, B ^{[1
]}

Mzerd, A

Giani, A

Boulouz, A

Pascal-Delannoy, F

Foucaran, A

Boyer, A

机构：

[1] Univ MV Agdal, Fac Sci Rabat, Dept Phys, Phys Mat Lab, Rabat, Morocco

[2] Univ Montpellier 2, Ctr Elect & Microoptoelect, CNRS, UMR 5507, F-34095 Montpellier 05, France

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1999年 / 18卷 / 13期

关键词：

D O I：

10.1023/A:1006664008838

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of (Bi1-xSbx)2Te3 were grown by metallorganic chemical vapor deposition using trimethylbismuth, triethylantimony and diethyltellurium as organometallic precursors. The layers were observed to be polycrystalline, and the surface morphology showed the presence of hexagonal crystals. The deposited films have n- or p-type conduction, depending on the growth parameters. Resistivity and thermoelectric power results revealed that p-type (Bi1-xSbx)2Te3 thin films show promising applications for electronic devices.

引用

页码：1095 / 1097

页数：3

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