Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

被引：83

作者：

Anders, Andre ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

D O I：

10.1063/1.2936307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases similar to Q(1/2), whereas the rate normalized to the average power decreases similar to Q(-1/2), with Q being the mean ion charge state number. (c) 2008 American Institute of Physics.

引用

页数：3

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