Properties of dopants in ZnGePe2 CdGeAs2, AgGaS2 and AgGaSe2

被引:29
作者
Bairamov, BH
Rud, VY
Rud, YV
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] State Tech Univ, St Petersburg 195251, Russia
关键词
D O I
10.1557/S0883769400029080
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:41 / 44
页数:4
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