Properties of dopants in ZnGePe2 CdGeAs2, AgGaS2 and AgGaSe2

被引：29

作者：

Bairamov, BH

Rud, VY

Rud, YV

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] State Tech Univ, St Petersburg 195251, Russia

来源：

关键词：

D O I：

10.1557/S0883769400029080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：41 / 44

页数：4

共 11 条

[1] DISCRIMINATIVE TEMPERATURE DEPENDENCIES OF DIFFERENTIAL LIGHT-SCATTERING CROSS-SECTIONS FROM AN ELECTRON-GAS IN SEMICONDUCTORS WITH A NONPARABOLIC DISPERSION OF ENERGY-BANDS
BAIRAMOV, BH
VOITENKO, VA
IPATOVA, IP
NEGODUYKO, VK
TOPOROV, VV
[J]. PHYSICAL REVIEW B, 1994, 50 (20): : 14923 - 14932
[2] RAMAN-SCATTERING FROM CURRENT CARRIERS IN SOLIDS
BAIRAMOV, BH
IPATOVA, IP
VOITENKO, VA
[J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1993, 229 (05): : 221 - 290
[3] Bairamov BH, 1997, PHYS STATUS SOLIDI B, V204, P456, DOI 10.1002/1521-3951(199711)204:1<456::AID-PSSB456>3.0.CO
[4] 2-J
[5] BAIRAMOV BH, 1997, MAT RES S P, V450, P339
[6] BORSHCHEVSKII AS, 1969, ZH NEORG KHIM+, V14, P1183
[7] GORYUNOVA NA, 1974, 2 4 2 SEMICONDUCTORS
[8] ANISOTROPY OF THE CHARGE-CARRIER TRANSPORT IN II-IV-V2 SINGLE-CRYSTALS
RUD, VY
RUD, YV
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 672 - 674
[9] II-IV-V2 SEMICONDUCTORS - INVESTIGATIONS AND POTENTIAL APPLICATIONS
RUD, YV
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 512 - 514
[10] RUD YV, 1994, SEMICONDUCTORS+, V28, P1105