Copper CVD precursors containing alkyl 3-oxobutanoate ligands

Bis(alkyl 3-oxobutanoato)copper(II) compounds were synthesized and utilized to deposit copper films, where alkyl = methyl, ethyl, 2-methoxyethyl, tert-butyl, and benzyl. Copper films were deposited at temperatures as low as 160 degrees C. They showed conformal coverage on patterned substrates with holes of diameter as small as 0.35 mu m and aspect ratio as high as 3. Average grain size of the deposited copper films depended on substrate temperature. The alkyl 3-oxobutanoate ligands Liberated from the precursors analyzed to be intact during the deposition processes.