TOPOGRAPHICAL LIMITATIONS TO THE METALLIZATION OF VERY LARGE-SCALE INTEGRATED STRUCTURES BY BIAS SPUTTERING - EXPERIMENTS AND COMPUTER-SIMULATIONS

被引：9

作者：

BADER, HP

LARDON, MA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期

关键词：

D O I：

10.1116/1.583482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1192 / 1194

页数：3

共 8 条

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BADER, HP
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[2] PLANARIZATION BY RADIO-FREQUENCY BIAS SPUTTERING OF ALUMINUM AS STUDIED EXPERIMENTALLY AND BY COMPUTER-SIMULATION
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[3] STEP COVERAGE SIMULATION AND MEASUREMENT IN A DC PLANAR MAGNETRON SPUTTERING SYSTEM
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[5] PLANAR DEPOSITION OF ALUMINUM BY RF-DC SPUTTERING WITH RF BIAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1466 - 1472
[6] HOMMA Y, 1985, 1985 P SEMI TECHN S, pF1
[7] OKABAYASHI H, 1985, 1985 P SEMI TECHN S, pF2
[8] STUDY OF PLANARIZED SPUTTER-DEPOSITED SIO2
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