Single-electron logic and memory devices

被引:34
作者
Korotkov, AN [1 ]
机构
[1] Univ Mediterranee, Fac Sci Luminy, Dept Phys, GPEC, F-13288 Marseille, France
关键词
D O I
10.1080/002072199133256
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-electronics is believed to be the leading candidate for future digital electronics which will be able to operate at similar to 10 nm size scale and below. However, the problems of integrated single-electronics are quite serious whereby the future prospects are still uncertain. In this paper we discuss the operation principles and required parameters of several proposed families of single-electron logic, including the logic based on single-electron transistors, wireless single-electron logic and single-electron parametron. We also briefly discuss the single-electron memory which is easier to implement than logic and, hence, is more important from the practical point of view. As an example, we consider the background-charge-insensitive hybrid SET/FET memory.
引用
收藏
页码:511 / 547
页数:37
相关论文
共 96 条
[61]   Device architecture for computing with quantum dots [J].
Lent, CS ;
Tougaw, PD .
PROCEEDINGS OF THE IEEE, 1997, 85 (04) :541-557
[62]   OBSERVATION OF QUANTUM EFFECTS AND COULOMB-BLOCKADE IN SILICON QUANTUM-DOT TRANSISTORS AT TEMPERATURES OVER 100 K [J].
LEOBANDUNG, E ;
GUO, LJ ;
WANG, Y ;
CHOU, SY .
APPLIED PHYSICS LETTERS, 1995, 67 (07) :938-940
[63]   SINGLE HOLE QUANTUM-DOT TRANSISTORS IN SILICON [J].
LEOBANDUNG, E ;
GUO, LJ ;
CHOU, SY .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2338-2340
[64]  
LIKHAREV K, 1995, P INT SEM DEV RES S, P355
[66]   SINGLE-ELECTRON TRANSISTORS - ELECTROSTATIC ANALOGS OF THE DC SQUIDS [J].
LIKHAREV, KK .
IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1142-1145
[67]   Analysis of Q0-independent single-electron systems [J].
Likharev, KK ;
Korotkov, AN .
VLSI DESIGN, 1998, 6 (1-4) :341-344
[68]  
LIKHAREV KK, 1992, SCI AM, V266, P80
[69]   ''Single-electron parametron'': Reversible computation in a discrete-state system [J].
Likharev, KK ;
Korotkov, AN .
SCIENCE, 1996, 273 (5276) :763-765