Single-electron logic and memory devices

被引:34
作者
Korotkov, AN [1 ]
机构
[1] Univ Mediterranee, Fac Sci Luminy, Dept Phys, GPEC, F-13288 Marseille, France
关键词
D O I
10.1080/002072199133256
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-electronics is believed to be the leading candidate for future digital electronics which will be able to operate at similar to 10 nm size scale and below. However, the problems of integrated single-electronics are quite serious whereby the future prospects are still uncertain. In this paper we discuss the operation principles and required parameters of several proposed families of single-electron logic, including the logic based on single-electron transistors, wireless single-electron logic and single-electron parametron. We also briefly discuss the single-electron memory which is easier to implement than logic and, hence, is more important from the practical point of view. As an example, we consider the background-charge-insensitive hybrid SET/FET memory.
引用
收藏
页码:511 / 547
页数:37
相关论文
共 96 条
[81]  
NAZAROV YV, 1989, JETP LETT+, V49, P126
[82]   MEASUREMENT OF DISCRETE CHARGE IN THE SYSTEMS OF ULTRA-SMALL TUNNEL-JUNCTIONS [J].
NAZAROV, YV .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1993, 90 (1-2) :77-94
[83]  
NAZAROV YV, 1992, SPRIN S ELE, V31, P61
[84]   Metallic resistively coupled single-electron transistor [J].
Pashkin, YA ;
Nakamura, Y ;
Tsai, JS .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :132-134
[85]   THERMOMETRY BY ARRAYS OF TUNNEL-JUNCTIONS [J].
PEKOLA, JP ;
HIRVI, KP ;
KAUPPINEN, JP ;
PAALANEN, MA .
PHYSICAL REVIEW LETTERS, 1994, 73 (21) :2903-2906
[86]   Nanoscale field-effect transistors: An ultimate size analysis [J].
Pikus, FG ;
Likharev, KK .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3661-3663
[87]   SINGLE ELECTRON PUMP FABRICATED WITH ULTRASMALL NORMAL TUNNEL-JUNCTIONS [J].
POTHIER, H ;
LAFARGE, P ;
ORFILA, PF ;
URBINA, C ;
ESTEVE, D ;
DEVORET, MH .
PHYSICA B, 1991, 169 (1-4) :573-574
[88]   MESOSCOPIC QUANTUM TRANSPORT - RESONANT-TUNNELING IN THE PRESENCE OF A STRONG COULOMB INTERACTION [J].
SCHOELLER, H ;
SCHON, G .
PHYSICAL REVIEW B, 1994, 50 (24) :18436-18452
[89]   FABRICATION TECHNIQUE FOR SI SINGLE-ELECTRON TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].
TAKAHASHI, Y ;
NAGASE, M ;
NAMATSU, H ;
KURIHARA, K ;
IWDATE, K ;
NAKAJIMA, K ;
HORIGUCHI, S ;
MURASE, K ;
TABE, M .
ELECTRONICS LETTERS, 1995, 31 (02) :136-137
[90]   ULTRAFAST OPERATION OF 5TH-ADJUSTED P(+)-N(+) DOUBLE-GATE SOI MOSFETS [J].
TANAKA, T ;
SUZUKI, K ;
HORIE, H ;
SUGII, T .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :386-388