Leakage current characteristics of (Ba,Sr)TiO3 thin films deposited on Ru electrodes prepared by metal organic chemical vapor deposition

被引：11

作者：

Kil, DS ^{[1
]}

Park, JB ^{[1
]}

Yoon, DS ^{[1
]}

Song, CR ^{[1
]}

Cho, HJ ^{[1
]}

Kim, Y ^{[1
]}

Yu, YS ^{[1
]}

Roh, JS ^{[1
]}

Yoon, HK ^{[1
]}

机构：

[1] Hyundai Elect Ind, Memory Res & Dev Div, Adv Proc Capacitor, Ichon Si 476701, Kyongki Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 5A期

关键词：

(Ba; Sr)TiO3; MOCVD; Ru; electrode; plasma;

D O I：

10.1143/JJAP.40.3260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Leakage current characteristics of (Ba,Sr)TiO3 (BST) thin films deposited by metal-organic chemical, vapor deposition (MOCVD) on Ru bottom electrodes were investigated. CVD-BST thin film on an Ru electrode showed much higher leakage current density than that on the Pt electrode. In the case of the CVD-BST thin film deposited on the PVD-BST(30 Angstrom)/Ru or N2O-plasma-treated Ru electrode, the leakage current density showed a very small Value of about 2 x 10(-8) A/cm(2) at +/- 1 V and the dielectric loss was about 0.006. It was found that oxygen atoms adsorbed on the surface of the Ru bottom electrode during the deposition of PVD-BST or N2O plasma treatment played a key role in restoring the barrier height at the bottom interface.

引用

页码：3260 / 3265

页数：6

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