112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

被引：86

作者：

Agarwal, B ^{[1
]}

Schmitz, AE

Brown, JJ

Matloubian, M

Case, MG

Le, M

Lui, M

Rodwell, MJW

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Hughes Res Labs, Malibu, CA 90265 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 12期

关键词：

distributed amplifier; MMIC; traveling-wave amplifier; TWA;

D O I：

10.1109/22.739247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180-GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-mu m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.

引用

页码：2553 / 2559

页数：7

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