A 5-Gb/s OEIC with voltage-up-converter

被引：10

作者：

Swoboda, R ^{[1
]}

Knorr, J ^{[1
]}

Zimmermann, H ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Elect Measurements & Circuit Design, A-1040 Vienna, Austria

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 07期

关键词：

integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; silicon;

D O I：

10.1109/JSSC.2005.847227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper (based on our previous paper at ESS-CIRC 2004, "A 2.4 GHz-Bandwidth OEIC with Voltage-Up-Converter," but new results for 4 Gb/s and 5 Gb/s have been added), an optoelectronic integrated circuit (OEIC) with an integrated voltage-up-converter (VUC) to enhance the frequency response of an integrated pin photodiode is presented. With the VUC a voltage of 11 V is generated on the chip without any additional external components. Thus, for a single-supply environment of 5 V the bandwidth of the OEIC is increased from 1.5 to 2.4 GHz. For data rates of 1, 3, 4, and 5 Gb/s at a bit error rate of 10(-9), sensitivities of -29.3, -24.3, -22.9, and -20.5 dBm, respectively, were measured at a wavelength of 660 nm. For the implementation of the OEIC a modified 0.6-mu m silicon BiCMOS technology with f(T) = 25 GHz is used.

引用

页码：1521 / 1526

页数：6

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