A high-speed monolithic silicon photoreceiver fabricated on SOI

被引：33

作者：

Li, R ^{[1
]}

Schaub, JD ^{[1
]}

Csutak, SM ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期

基金：

美国国家科学基金会;

关键词：

monolithic integrated circuits; MOS integrated circuits; optical receivers; photodetectors; photodiodes; silicon; silicon on insulator technology;

D O I：

10.1109/68.868003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a monolithically integrated optical receiver fabricated on an SOI substrate, The receiver consists of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At V-DD = 5 V, the receiver dissipated 37 mW of power with a typical transimpedance gain of 49 dB . Omega. At operating speeds of 622 Mb/s and 1.0 and 2.0 Gb/s, the receiver achieved a bit error ratio of 10(-9) at received powers of -31.6, -25.7, and -17.7 dBm, respectively.

引用

页码：1046 / 1048

页数：3

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