A 1-Gb/s monolithically integrated silicon NMOS optical receiver

被引：26

作者：

Schow, CL ^{[1
]}

Schaub, JD ^{[1
]}

Li, R ^{[1
]}

Qi, J ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 06期

关键词：

monolithic integrated circuits; optical communications; optical receivers; optoelectronic devices; photodetectors; photodiodes; p-i-n photodiodes;

D O I：

10.1109/2944.736109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a monolithically integrated optical receiver consisting of a silicon NMOS transimpedance preamplifier paired with a lateral, interdigitated p-i-n photodiode, The photodiode's quantum efficiency was 82% at 850 nm, and it exhibited a dark current of 300 pA at -30 V, At the optimal operating point, the preamplifier achieved a bandwidth of 500 MHz, a transimpedance of 51.4 dB.Omega and dissipated only 10.8 mW of power at a power supply voltage of 1.8 V, At a bit-error-rate of 10(-9), the receiver exhibited sensitivities of -22.8, -15.0, and -9.3 dBm at bit rates of 622 Mb/s, 900 Mb/s, and 1 Gb/s, respectively.

引用

页码：1035 / 1039

页数：5

共 11 条

[1] GIGAHERTZ TRANSRESISTANCE AMPLIFIERS IN FINE LINE NMOS [J].