Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

被引：11

作者：

Rieh, JS ^{[1
]}

Klotzkin, D

Qasaimeh, Q

Lu, LH

Yang, K

Katehi, LPB

Bhattacharya, P

Croke, ET

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Hughes Res Labs, Malibu, CA 90265 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 03期

关键词：

monolithic integration; photoreceivers; SiGe;

D O I：

10.1109/68.661428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f(max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.

引用

页码：415 / 417

页数：3

共 9 条

[1] A silicon-based integrated NMOS-p-i-n photoreceiver [J].

Garrett, LD ;

Qi, J ;

Schow, CL ;

Campbell, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (03) :411-416

[2] MONOLITHICALLY INTEGRATED SILICON NMOS PIN PHOTORECEIVER [J].

HE, YS ;

GARRETT, LD ;

LEE, KH ;

CAMPBELL, JC .

ELECTRONICS LETTERS, 1994, 30 (22) :1887-1888

[3] SI-BASED RECEIVERS FOR OPTICAL-DATA LINKS [J].

JALALI, B ;

NAVAL, L ;

LEVI, AFJ .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (06) :930-935

[4] DEVELOPMENT OF AN INTEGRATED HIGH-SPEED SILICON PIN PHOTODIODE SENSOR [J].

KYOMASU, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) :1093-1099

[5]

Schuppen A, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P743, DOI 10.1109/IEDM.1995.499325

[6] INTEGRATION OF WAVE-GUIDES AND PHOTODETECTORS IN SIGE FOR 1.3 MU-M OPERATION [J].

SPLETT, A ;

ZINKE, T ;

PETERMANN, K ;

KASPER, E ;

KIBBEL, H ;

HERZOG, HJ ;

PRESTING, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :59-61

[7] A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's [J].

Tashiro, T ;

Tatsumi, T ;

Sugiyama, M ;

Hashimoto, T ;

Morikawa, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) :545-550

[8] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J].

TEMKIN, H ;

PEARSALL, TP ;

BEAN, JC ;

LOGAN, RA ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :963-965

[9] SI-OEIC WITH A BUILT-IN PIN-PHOTODIODE [J].

YAMAMOTO, M ;

KUBO, M ;

NAKAO, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (01) :58-63

← 1 →