A silicon NMOS monolithically integrated optical receiver

We report a silicon p-i-n/NMOS monolithically integrated optical receiver, The p-i-n photodiode is a planar interdigitated structure that has exhibited a dark current of 1.3 pA at 5 V and quantum efficiencies of 84 and 74% at 800 and 870 nm, respectively, Both depletion- and enhancement-mode MOSFET's are used in the preamplifier; the effective channel length of the MOSFET's is 0.6 mu m. A transimpedance of 6.5 k Omega and a bandwidth of 130 MHz has been obtained from the preamplifier circuit, The sensitivities for a bit error rate of 10(-9) were -33 and -25.5 dBm at bit rates of 155 and 300 h Mb/s, respectively.