Si/SiO2: Resonant cavity photodetector

被引：28

作者：

Diaz, DC ^{[1
]}

Schow, CL ^{[1
]}

Qi, JM ^{[1
]}

Campbell, JC ^{[1
]}

Bean, JC ^{[1
]}

Peticolas, LJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.116847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been shown earlier that GeSi/Si resonant-cavity photodiodes can achieve high speed without sacrificing quantum efficiency. In this letter, we report a Si-based resonant-cavity photodiode that utilizes a Si/SiO2 Bragg reflector. This structure is more compatible with standard Si processing technology than the GeSi/Si resonant-cavity photodiodes. The absorbing region is a 1-mu m-thick polysilicon layer that has been annealed to enhance secondary grain growth and the bottom mirror consists of three quarter-wavelength pairs of Si and SiO2. After annealing the dark current was 9 mu A at 1 V, the peak quantum efficiency was 44%, and the bandwidth was >1.4 Ghz. (C) 1996 American Institute of Physics.

引用

页码：2798 / 2800

页数：3

共 10 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].