Control of agglomeration on copper seed layer employed in the copper interconnection

This paper describes the control and reduction of agglomeration of the thin copper seed layer deposited on different barrier layers. Higher stress is applied in layers deposited on TaN and Ta barrier layers. This stress greatly affects the agglomeration and adhesion strength. This stress can be reduced markedly with employing a TaSiN barrier layer instead of Ta barrier layer. Correlations have been found between the stress in as-deposited copper seed layer and the agglomeration height formed with this annealing. That is, agglomeration occurs markedly in the layer on tantalum nitride (TaN) and Ta barrier layers. Although lower stress layer can be accomplished at the Cu seed/TaSiN interface, no agglomerations occur in the TaSiN barrier layer. This barrier layer for copper diffusion can also get promising barrier performance. (C) 2001 The Electrochemical Society.