Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

被引:46
作者
Huang, XR [1 ]
Bai, J
Dudley, M
Dupuis, RD
Chowdhury, U
机构
[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1940123
中图分类号
O59 [应用物理学];
学科分类号
摘要
The epitaxial tilting effect of GaN films grown on vicinal (0001) surfaces of sapphire and its relationship with the offcut angles and the substrate surface steps have been revealed using synchrotron Laue method and high-resolution x-ray diffraction. This effect is a general consequence of the large out-of-plane lattice mismatch between GaN and sapphire and can be explained by the extended Nagai theory based on the step configurations. The large lattice tilts and their formation mechanism indicate that the substrate surface morphology may be a very important factor that influences the epitaxy process and the crystalline quality of GaN films in vicinal surface epitaxy. © 2005 American Institute of Physics.
引用
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页码:1 / 3
页数:3
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