Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films

被引：35

作者：

Gerstner, EG ^{[1
]}

McKenzie, DR ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical measurements of nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films have revealed a reversible nonvolatile memory effect, related to the excitation and de-excitation of electrons between deep acceptor states and shallow donor states within the mobility gap. This effect is characterized by changes in the small signal film conductivity of up to 10 times, and has been used to fabricate 1-bit memory cells with effective memory retention times in the order of several months. (C) 1998 American Institute of Physics. [S0021-8979(98)05522-4].

引用

页码：5647 / 5651

页数：5

共 15 条

[1] AMORPHOUS DIAMOND-SI SEMICONDUCTOR HETEROJUNCTIONS [J].