Tetrahedral bonding in amorphous carbon

Electron configurations close to the tetrahedral sp(3) hybridization are found in pure amorphous carbon at a concentration which depends on preparation conditions. Tetrahedral bonding at levels of approximately 80% is found in amorphous carbons formed from beams of carbon ions with energies in a 'window' between 20 eV and approximately 500 eV. Suitable techniques for its formation include cathodic are deposition, ion beam deposition and laser ablation. Similar material appears to be formed by pressure treatment of fullerene precursors and by displacement damage in diamond. Highly tetrahedral forms of amorphous carbon (ta-C) show electronic, optical and mechanical properties which approach those of diamond and are quite different from amorphous carbons with low sp(3) content. Useful techniques for determining the sp(3) content include electron energy loss spectroscopy, electron and neutron diffraction and Raman spectroscopy. Considerable progress has been made in the understanding of this material by simulating its structure in the computer with a range of techniques from empirical potentials to ab initio quantum mechanics. The structure shows departures from an idealized glassy state of diamond which would have a random tetrahedral network structure as used to describe amorphous silicon and germanium. A surprising feature of the structure simulated using ab initio methods is the presence of small rings containing three or four sp(3) carbon atoms. The electronic and optical properties are strongly influenced by the residual of sp(2) carbon. Applications to electronic devices are at an early stage with the demonstration of photoconductivity and some simple junction devices. Applications as a wear resistant coating are promising, since the theoretically predicted high values of elastic constants, comparable to but less than those of diamond, are achieved experimentally, together with low friction coefficients.