Picosecond electronic relaxation in CdS/HgS/CdS quantum dot quantum well semiconductor nanoparticles

被引：60

作者：

Kamalov, VF ^{[1
]}

Little, R ^{[1
]}

Logunov, SL ^{[1
]}

ElSayed, MA ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH CHEM & BIOCHEM,ATLANTA,GA 30322

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1996年 / 100卷 / 16期

关键词：

D O I：

10.1021/jp953708m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Subpicosecond photoexcitation of CdS/HgS/CdS quantum dot quantum well nanoparticles at wavelengths shorter than their interband absorption (390 nm) leads to a photobleach spectrum at longer wavelengths (440-740 nm). The photobleach spectrum changes and its maximum red-shifts with delay time. These results are explained by the rapid quenching of the initially formed laser-excited excitons by two types of energy accepters (traps); one is proposed to be due to CdS molecules at the CdS/HgS interface, and the other trap is that present in the CdS/HgS/CdS well. The results of the excitation at longer wavelengths as well as the formation and decay of the bleach spectrum at different wavelengths support this description.

引用

页码：6381 / 6384

页数：4

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