Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

被引：7

作者：

Aguilera, L. ^{[1
]}

Polspoel, W. ^{[2
]}

Volodin, A. ^{[3
]}

Van Haesendonck, C. ^{[3
]}

Porti, M. ^{[1
]}

Vandervorst, W. ^{[2
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 04期

关键词：

D O I：

10.1116/1.2958246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the environmental conditions on conductive atomic force microscopy (CAFM) characterization of advanced MOS gate dielectrics was investigated. The effect of the environment on AFM measurements was built by placing a commercial CAFM into a chamber, which can be evacuated up to a pressure of 7 × 10-6 Torr. The CAFM was operated in contact mode using Pt/Cr coated Si tips. Topography maps of a larger area that includes the previously scanned region was also measured for high-k dielectric samples after a gate injection scan of 7 V in vacuum and in ambient conditions. the topographical profiles showed changes of 1.1 nm in vacuum and 4.3 nm in air ambient conditions. A vacuum CAFM was developed to perform vacuum electrical tests at nanometer scale. IV characteristics measured in vacuum environment show lower voltage and larger currents compared to in-air results, pointing out better conductivity measurements when working in vacuum.

引用

页码：1445 / 1449

页数：5

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