Measuring electrical current during scanning probe oxidation

被引:36
作者
Pérez-Murano, F
Martín, C
Barniol, N
Kuramochi, H
Yokoyama, H
Dagata, JA
机构
[1] IMB, CNM, CSIC, E-01893 Bellaterra, Spain
[2] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain
[3] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3958568, Japan
[4] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
关键词
D O I
10.1063/1.1572480
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip-surface distance is known unequivocally during current acquisition. Current measurements at finite tip-sample distance, in particular, unveil how the geometry of the meniscus influences its electrical conduction properties as well as the role of space charge at very small tip-sample distances. (C) 2003 American Institute of Physics.
引用
收藏
页码:3086 / 3088
页数:3
相关论文
共 14 条
[1]  
ABADAL G, 2001, PROBE MICROSC, V2, P121
[2]   Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].
Avouris, P ;
Hertel, T ;
Martel, R .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :285-287
[3]   Understanding scanned probe oxidation of silicon [J].
Dagata, JA ;
Inoue, T ;
Itoh, J ;
Yokoyama, H .
APPLIED PHYSICS LETTERS, 1998, 73 (02) :271-273
[4]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[5]   Predictive model for scanned probe oxidation kinetics [J].
Dagata, JA ;
Perez-Murano, F ;
Abadal, G ;
Morimoto, K ;
Inoue, T ;
Itoh, J ;
Yokoyama, H .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2710-2712
[6]   Patterning of silicon surfaces with noncontact atomic force microscopy:: Field-induced formation of nanometer-size water bridges [J].
García, R ;
Calleja, M ;
Rohrer, H .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (04) :1898-1903
[7]  
Garcia R, 1998, APPL PHYS LETT, V72, P2295, DOI 10.1063/1.121340
[8]   Semiconductor quantum point contact fabricated by lithography with an atomic force microscope [J].
Held, R ;
Heinzel, T ;
Studerus, P ;
Ensslin, K ;
Holland, M .
APPLIED PHYSICS LETTERS, 1997, 71 (18) :2689-2691
[9]   Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat α-alumina substrate [J].
Matsumoto, K ;
Gotoh, Y ;
Maeda, T ;
Dagata, JA ;
Harris, JS .
APPLIED PHYSICS LETTERS, 2000, 76 (02) :239-241
[10]   Density variations in scanned probe oxidation [J].
Morimoto, K ;
Pérez-Murano, F ;
Dagata, JA .
APPLIED SURFACE SCIENCE, 2000, 158 (3-4) :205-216