Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM

被引：23

作者：

Aguilera, L ^{[1
]}

Porti, M ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 03期

关键词：

atomic force microscopy (AFM); dielectric breakdown; HfO2; high-kappa dielectric; MOS device;

D O I：

10.1109/LED.2006.869799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high-kappa gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level.

引用

页码：157 / 159

页数：3

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