Simultaneous electric and magnetic field induced nonvolatile memory

被引：19

作者：

Quintero, M ^{[1
]}

Leyva, AG ^{[1
]}

Levy, P ^{[1
]}

机构：

[1] CNEA, Ctr Atom Constituyentes, Dept Fis, RA-1650 San Martin, Buenos Aires, Argentina

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 24期

关键词：

D O I：

10.1063/1.1948535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect (presumably related to the presence of inhomogeinities) is present in a broad temperature range (300 - 20 K), being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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