Photoluminescence properties of size-selected Si nanocluster films prepared by laser ablation

Size-dispersed Si nanocluster films have been synthesized by a method of crossing an Ar gas beam perpendicularly to a silicon cluster beam that is produced by a laser ablation technique. Flight directions of the nanoclusters are changed due to Ar gas collisions, and smaller nanoclusters are deflected further from the axis of the primary cluster beam. The size-dispersed nanocluster films exhibit strong red photoluminescence (PL) after exposure to the air. The PL peal; energy changes between 1.42 and 1.72 eV depending on the sample position. The average diameter of the oxidized nanoclusters characterized by transmission electron microscopy is 10 nm at the position of the primary cluster beam axis and becomes smaller as deviated from the axis. The relation between the PL peak energy and the size of the oxidized Si nanoclusters is discussed.