Mixed ionic-electronic conducting thin-films of CuBr: a new active component for gas sensors?

被引：12

作者：

Seguin, JL ^{[1
]}

Bendahan, M

Lauque, P

Jacolin, C

Pasquinelli, M

Knauth, P

机构：

[1] Fac Sci & Tech St Jerome, Lab Elect & Physicochim Couches Minces, Serv 152, F-13397 Marseille 20, France

[2] Fac Sci & Tech St Jerome, Lab Phys & Semicond & Oxydes, Serv 231, F-13397 Marseille 20, France

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

metal halides; thin films; sputtering; defect chemistry;

D O I：

10.1016/S0924-4247(98)00320-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-films of mixed ionic-electronic conducting CuBr were prepared by r.f. sputtering. Microstructure and electrical properties of the films depend on the nature of the substrate, e.g., silicate glass, nitrided silicon wafers and copper metal. Current-voltage characteristics are discussed with respect to defect chemistry and semiconductor properties of CuBr. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：237 / 241

页数：5

共 18 条

[11] IONIC-CONDUCTION IN-SPACE CHARGE REGIONS [J].